maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 30 v collector-emitter voltage (r be 50?) v cer 30 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 2.5 v collector current i c 25 ma peak collector current (f 1 mhz) i cm 50 ma power dissipation p d 200 mw power dissipation (t c =25c) p d 300 mw operating and storage junction temperature t j, t stg -65 to +200 c thermal resistance ja 875 c/w thermal resistance jc 583 c/w electrical characteristics: (t a =25c unless otherwise noted) bfx89 BFY90 symbol test conditions min typ max min typ max units i cbo v cb =15v 10 10 na bv cbo i c =10a 30 30 v bv cer i c =1.0ma, r be =50? 30 30 v bv ceo i c =1.0ma 15 15 v bv ebo i e =10a 2.5 2.5 v h fe v ce =1.0v, i c =2.0ma 20 150 25 150 h fe v ce =1.0v, i c =25ma 20 125 20 125 f t v ce =5.0v, i c =2.0ma, f=500mhz 1.0 1.0 1.1 ghz f t v ce =5.0v, i c =25ma, f=500mhz 1.2 1.3 1.4 ghz c ob v cb =10v, i e =0, f=1.0mhz 1.7 1.5 pf c re v ce =5.0v, i c =2.0ma, f=1.0mhz 0.6 0.6 0.8 pf bfx89 BFY90 npn silicon rf transistors jedec to-72 case central semiconductor corp. tm r3 (20-march 2006) description: the central semiconductor bfx89 and BFY90 are silicon npn epitaxial planar transistors mounted in a hermetically sealed package designed for vhf/uhf amplifier, oscillator, and converter applications. marking code: full part number
central semiconductor corp. tm bfx89 BFY90 npn silicon rf transistors r3 (20-march 2006) jedec to-72 case - mechanical outline lead code: 1) emitter 2) base 3) collector 4) case electrical characteristics (continued): (t a =25c unless otherwise noted) bfx89 BFY90 symbol test conditions min typ max min typ max units g pe v ce =10v, i c =8ma, f=200mhz 19 22 db g pe v ce =10v, i c =8ma, f=800mhz 7.0 db g pe v ce =10v, i c =14ma, f=200mhz 21 23 db g pe v ce =10v, i c =14ma, f=800mhz 8.0 db nf v ce =5.0v, i c =2.0ma, f=100khz 4.0 db nf v ce =5.0v, i c =2.0ma, f=200mhz 3.3 4.0 2.5 3.5 db nf v ce =5.0v, i c =2.0ma, f=500mhz, r g =50? 6.5 5.0 db nf v ce =5.0v, i c =2.0ma, f=800mhz 7.0 5.5 db p o v ce =10v, i c =8ma, f=205mhz 6.0 mw p o v ce =10v, i c =14ma, f=205mhz 10 12 mw
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